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LAB

All in One Lithography Simulation

Layout and process optimization platform for most common lithography technologies

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Experimental layout optimization and process development is highly time consuming and thereby expensive. Lithography simulation enables virtual exploration of a huge parameter space very quickly. LAB enables further miniaturization for proximity, projection, laser and electron beam lithography in one platform for applications such as IC manufacturing, flat panel display, LED, MEMS, 3D packaging, mask manufacturing and nano-fabrication. The fast and accurate calculation of the intensity image enables layout optimization (OPC), mask layout verification, optimization of process conditions (e.g. illumination, stack) and process window (e.g. gap or defocus and exposure dose variation) by varying the layout and/or exposure parameters. Thousands of experiments can be computed "overnight" without producing masks or "burning" wafers. Once a good image contrast has been obtained, 3D resist development modeling allows further optimization of the resist profiles. Complex process effects such as lateral development, density dependent bias in e-beam or in laser lithography can be analyzed and compensated.

 
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LAB Major Features

Layout Operations

  • Import Export of all major layout formats (GDSII, OASIS, CIF, DXF)
  • Loading full layout data
  • Extraction (Region, Layer, Cell), Transformation (Scale, Shift, Mirror, Rotate)
  • Heal, Bias, Boolean operations, Merge

Layout Editor

  • Creation of new layouts
  • Layout modification within flows for manual OPC  

Mask Definition

  • Arbitrary layouts, regions of large mask data
  • Gray-tone mask
  • Phase shift mask

Stack Definition

  • Any substrate and coating material with wavelength specific n/k parameter from material database
  • Resist with wavelength dependent n/k, bleaching, Dill and development parameter (Mack4, CAR, Percolation, Threshold)
  • 3D Topography (optional)

Proximity Exposure

  • Source spectrum (single line, broad band, peak-width)
  • Source shape (circular with collimation angle, user defined, SUSS exposure optics),
  • Mask/Illumination tilt in X and Y
  • Fast and accurate simulation of 2D or 3D intensities based on Rayleigh-Sommerfeld and Transfer-matrix method (TMM)
  • Arbitrary gap from contact to large distance

Projection Exposure

  • Source spectrum (single line, broad band, peak-width)
  • Source shape (circular, standard shapes of major stepper tools, user defined)
  • Fast and accurate simulation of 2D or 3D intensities based on Fraunhofer diffraction solving the Hopkins equation and Transfer-matrix method (TMM)
  • Projection aligner, scanner, stepper of any NA including liquid immersion

 Laser Beam Exposure

  • Models any major laser tools for mask or wafer exposure
  • Includes the illumination optics of HIMT exposure tools
  • Simulates gray-tone lithography

Electron Beam Exposure

  • Models Gaussian as well as shaped beam tools
  • Interfaces to various 3D Monte-Carlo PSF packages, or user defined Multi-Gaussian PSF
  • Simulation of dose modulated layouts (3D lithography, proximity effect correction)

Resist Development

  • Simple and fast threshold and diffused aerial image model
  • Mack4 for positive and inverse Mack negative resist development model
  • CAR with dynamic Acid / Quencher diffusion / reaction model
  • Percolation resist development model
  • Surface inhibition for Mack4 and Percolation model
  • Extract 2D resist as layout data   

Metrology - Calibration - Optimizer

  • Automated measurement at multiple metrology positions
  • CD measurements at user defined resist height, or remaining resist thickness measurements
  • Measurements can be collected for viewing in trend graphs (FE matrix, PW graph)
  • Calibration of resist parameters with experimental data (contrast curves, FE matrix, arbitrary metrology data)
  • Flow parameters can be optimized to match a specified target using the Optimizer module

Visualization

  • 2D visualization of aerial image, bulk image, Photo-Active-Compound (PAC) concentration, resist profile
  • 2D views in continuous color mode, or discrete contour lines at user defined thresholds
  • Arbitrary cut-lines in 2D views, 1D view along these cut-lines
  • Combination of 1D and 2D views next to each other
  • Overlay mask and/or target layout in 1D and 2D views
  • 2D Matrix views, 1D Matrix or Overlay view
  • Analysis of image quality: intensity, image slope, image log-slope
  • 3D visualization of resist profiles
  • View of collected metrology results as graph, e.g. FE Matrix (smile plot), process window

Import 3D - Export 3D

  • Save and load 3D simulation data (image intensities, concentration)
  • CSV Export
 
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